JPS6148656B2 - - Google Patents
Info
- Publication number
- JPS6148656B2 JPS6148656B2 JP53138418A JP13841878A JPS6148656B2 JP S6148656 B2 JPS6148656 B2 JP S6148656B2 JP 53138418 A JP53138418 A JP 53138418A JP 13841878 A JP13841878 A JP 13841878A JP S6148656 B2 JPS6148656 B2 JP S6148656B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- insulator
- charge
- electrons
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012212 insulator Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 3
- 239000002800 charge carrier Substances 0.000 claims 2
- 230000005865 ionizing radiation Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 21
- 238000010894 electron beam technology Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000000691 measurement method Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13841878A JPS5565145A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13841878A JPS5565145A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5565145A JPS5565145A (en) | 1980-05-16 |
| JPS6148656B2 true JPS6148656B2 (en]) | 1986-10-25 |
Family
ID=15221493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13841878A Granted JPS5565145A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5565145A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559359A (en) * | 1994-07-29 | 1996-09-24 | Reyes; Adolfo C. | Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
| JPH08102481A (ja) * | 1994-09-30 | 1996-04-16 | Shin Etsu Handotai Co Ltd | Ｍｉｓ型半導体装置の評価方法 |
| CN111261708B (zh) * | 2020-02-11 | 2022-09-23 | 捷捷微电(上海)科技有限公司 | 一种半导体功率器件结构 |
| CN111855705B (zh) * | 2020-07-28 | 2023-03-28 | 哈尔滨工业大学 | 电子器件中氧化物层辐射诱导缺陷的检测方法 |
-
1978
- 1978-11-11 JP JP13841878A patent/JPS5565145A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5565145A (en) | 1980-05-16 |
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